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| ZXMN10A08DN8 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.25 DESCRIPTION ID = 2.1A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package APPLICATIONS * DC - DC converters * Power management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMN10A08DN8TA ZXMN10A08DN8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2,500 units PINOUT DEVICE MARKING * ZXMN 10A08D Top View ISSUE 4 - JANUARY 2005 1 SEMICONDUCTORS ZXMN10A08DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate source voltage Continuous drain current V GS =10V; T A =25C (b) V GS =10V; T A =70C (b) V GS =10V; T A =25C (a) Pulsed drain current (c) Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Operating and storage temperature range (b) SYMBOL V DSS V GS ID LIMIT 100 20 2.1 1.7 1.6 9 2.6 9 1.25 10 1.8 14.5 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R JA R JA VALUE 100 69 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph ISSUE 4 - JANUARY 2005 SEMICONDUCTORS 2 ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 3 SEMICONDUCTORS ZXMN10A08DN8 ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated). PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1) Forward transconductance (1)(3) DYNAMIC (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Qg Q gs Q gd V SD t rr Q rr 100 0.5 100 2.0 0.25 0.30 5.0 V A nA V I D =250 A, V GS =0V V DS =100V, V GS =0V V GS = 20V, V DS =0V I =250 A, V DS = V GS D V GS =10V, I D =3.2A V GS =6V, I D =2.6A S V DS =15V,I D =3.2A Input capacitance Output capacitance Reverse transfer capacitance SWITCHING (2) (3) 405 28.2 14.2 pF pF pF V DS =50 V, V GS =0V, f=1MHz Turn-on delay time Rise time Turn-off delay time Fall time Gate charge Total gate charge Gate-source charge Gate-drain charge SOURCE-DRAIN DIODE Diode forward voltage (1) Reverse recovery time (3) Reverse recovery charge (3) 3.4 2.2 8 3.2 4.2 7.7 1.8 2.1 ns ns ns ns nC nC nC nC V DS =50V,V GS =10V, I D =1.2A V DS =50V,V GS =5V, I D =1.2A V DD =30V, I D =1.2A R G 6.0 , V GS =10V 0.87 27 32 0.95 V ns nC T J =25C, I S =3.2A, V GS =0V T J =25C, I F =1.2A, di/dt= 100A/ s NOTES: (1) Measured under pulsed conditions. Width = 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 4 - JANUARY 2005 SEMICONDUCTORS 4 ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 5 SEMICONDUCTORS ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 SEMICONDUCTORS 6 ZXMN10A08DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES PACKAGE DIMENSIONS Millimeters DIM Min A A1 D H E L 1.35 0.10 4.80 5.80 3.80 0.40 Max 1.75 0.25 5.00 6.20 4.00 1.27 Min 0.053 0.004 0.189 0.228 0.150 0.016 Max 0.069 0.010 0.197 0.244 0.157 0.050 h e b c Inches DIM Min Max Min Max 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 Millimeters Inches (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on towww.zetex.com ISSUE 4 - JANUARY 2005 7 SEMICONDUCTORS |
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